Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
0.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
415 pF @ 6 V
Power Dissipation (Max)
400mW (Ta), 12.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-WLCSP (0.78x0.78)
Package / Case
4-XFBGA, WLCSP