Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3.2V, 4.5V
Rds On (Max) @ Id, Vgs
462mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
85 pF @ 15 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-WLCSP (0.96x0.96)
Package / Case
4-UFBGA, WLCSP
Base Product Number
FDZ3N