Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
62mOhm @ 22A, 8V
Vgs(th) (Max) @ Id
2.6V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 400 V
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Base Product Number
TPH3205