China
Spain
Rusia
Italy
GermanySI4511DY-T1-GE3
Part Number Overview
Manufacturer Part Number
SI4511DY-T1-GE3
Description
MOSFET N/P-CH 20V 7.2A 8-SOIC
Detailed Description
Mosfet Array 20V 7.2A, 4.6A 1.1W Surface Mount 8-SOIC
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
7.2A, 4.6A
Rds On (Max) @ Id, Vgs
14.5mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4511
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI4511DYT1GE3
SI4511DY-T1-GE3CT
SI4511DY-T1-GE3DKR
SI4511DY-T1-GE3TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI4511DY-T1-GE3
Documents & Media
Datasheets
1(SI4511DY)
PCN Obsolescence/ EOL
1(SIL-1072014 Rev0 17/Dec/2014)
Quantity Price
-
Substitutes
Part No. : DMC2020USD-13
Manufacturer. : Diodes Incorporated
Quantity Available. : 0
Unit Price. : $0.80000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $0.80000
Substitute Type. : Similar