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Part Number Overview
Manufacturer Part Number
IXTP4N70X2M
Description
MOSFET N-CH 700V 4A TO220
Detailed Description
N-Channel 700 V 4A (Tc) 30W (Tc) Through Hole TO-220 Isolated Tab
Manufacturer
IXYS
Standard LeadTime
47 Weeks
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
Ultra X2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.8 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
386 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Isolated Tab
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IXTP4
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IXTP4N70X2M-ND
-1402-IXTP4N70X2M
238-IXTP4N70X2M
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTP4N70X2M
Documents & Media
Datasheets
()
Environmental Information
1(Ixys IC REACH)
Featured Product
1(Power MOSFETs 600 V to 700 V with HiPerFET™ Option - X2-Class Series)
PCN Design/Specification
1(Multiple Devices Molding Compound 07/Sep/2020)
HTML Datasheet
1(IXTP4N70X2M)
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