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Part Number Overview
Manufacturer Part Number
FQA11N90-F109
Description
MOSFET N-CH 900V 11.4A TO3PN
Detailed Description
N-Channel 900 V 11.4A (Tc) 300W (Tc) Through Hole TO-3PN
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
960mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA11
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FQA11N90_F109
2156-FQA11N90-F109-OS
ONSONSFQA11N90-F109
FQA11N90_F109-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQA11N90-F109
Documents & Media
Datasheets
1(FQA11N90-F109)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 23/Dec/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(Assembly/Test 16/Nov/2023)
PCN Packaging
()
PCN Part Number
1(Mult Device Part Number Chg 30/May/2017)
HTML Datasheet
1(FQA11N90-F109)
Quantity Price
-
Substitutes
-