Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
103mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 10 V
Power Dissipation (Max)
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CST3B
Package / Case
3-SMD, No Lead
Base Product Number
SSM3J46