Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
145mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 20 V
Power Dissipation (Max)
1.5W (Ta), 3.5W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
PCP