Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V
Rds On (Max) @ Id, Vgs
12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds
9.1 pF @ 3 V
Power Dissipation (Max)
100mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CST3
Package / Case
SC-101, SOT-883
Base Product Number
SSM3J15