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Part Number Overview
Manufacturer Part Number
TPH3212PS
Description
GANFET N-CH 650V 27A TO220AB
Detailed Description
N-Channel 650 V 27A (Tc) 104W (Tc) Through Hole TO-220AB
Manufacturer
Transphorm
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Transphorm
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
72mOhm @ 17A, 8V
Vgs(th) (Max) @ Id
2.6V @ 400uA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 8 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
1130 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
TPH3212
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TPH3212PS
Documents & Media
Datasheets
1(TPH3212PS)
Product Training Modules
1(GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies)
Video File
()
Featured Product
1(TDTTP2500P100-KIT 2.5 kW Totem-Pole PFC GaN Eval Board)
PCN Obsolescence/ EOL
1(TPH32/TPH32 02/Mar/2021)
HTML Datasheet
1(TPH3212PS)
Simulation Models
1(TPH3212PS Spice Model)
Quantity Price
-
Substitutes
-