China
Spain
Rusia
Italy
Germany2SD1694-AZ
Part Number Overview
Manufacturer Part Number
2SD1694-AZ
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 3 A 250MHz 1.3 W Through Hole TO-126
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
508
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 20mA, 2A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
800 @ 500mA, 5V
Power - Max
1.3 W
Frequency - Transition
250MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-2SD1694-AZ
RENRNS2SD1694-AZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD1694-AZ
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 508
Unit Price: $0.59
Packaging: Bulk
MinMultiplier: 508
Packaging: Bulk
MinMultiplier: 508
Substitutes
-