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Part Number Overview
Manufacturer Part Number
SI2333CDS-T1-E3
Description
MOSFET P-CH 12V 7.1A SOT23-3
Detailed Description
P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Manufacturer
Vishay Siliconix
Standard LeadTime
18 Weeks
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
35mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
1225 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
1.25W (Ta), 2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SI2333
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
Q6936817FN
SI2333CDS-T1-E3TR
SI2333CDS-T1-E3CT
SI2333CDST1E3
SI2333CDS-T1-E3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI2333CDS-T1-E3
Documents & Media
Datasheets
1(Si2333CDS)
Environmental Information
()
PCN Assembly/Origin
1(New Solder Plating Site 18/Apr/2023)
HTML Datasheet
1(Si2333CDS)
Quantity Price
Quantity: 30000
Unit Price: $0.17393
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