Mfr
Taiwan Semiconductor Corporation
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
140mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 30 V
Power Dissipation (Max)
48W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220
Package / Case
TO-220-3 Full Pack, Isolated Tab