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Part Number Overview
Manufacturer Part Number
BSC883N03MSG
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 34 V 19A (Ta), 98A (Tc) 2.5W (Ta), 57W (Tc) Surface Mount PG-TDSON-8
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
799
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™3M
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
34 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8
Package / Case
8-PowerTDFN
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFBSC883N03MSG
2156-BSC883N03MSG
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC883N03MSG
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 799
Unit Price: $0.38
Packaging: Bulk
MinMultiplier: 799
Packaging: Bulk
MinMultiplier: 799
Substitutes
-