Part Number Overview

Manufacturer Part Number
IPP05CN10NGXKSA1
Description
MOSFET N-CH 100V 100A TO220-3
Detailed Description
N-Channel 100 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
181 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP05CN10

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IPP05CN10NGXKSA1-ND
SP000680814
IPP05CN10NGIN
IPP05CN10N G
IPP05CN10NG
IPP05CN10NGXK
IPP05CN10N G-ND
IPP05CN10NGIN-ND
IPP05CN10NGX
448-IPP05CN10NGXKSA1

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP05CN10NGXKSA1

Documents & Media

Datasheets
1(IP(B,I,P)05CN10N G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IP(B,I,P)05CN10N G)
Simulation Models
1(MOSFET OptiMOS™ 100V N-Channel Spice Model)

Quantity Price

-

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