Part Number Overview

Manufacturer Part Number
IPB065N03LGATMA1
Description
MOSFET N-CH 30V 50A D2PAK
Detailed Description
N-Channel 30 V 50A (Tc) 56W (Tc) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
56W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB065N

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IPB065N03LGINCT-ND
SP000254709
IPB065N03LGATMA1CT
IPB065N03LGATMA1DKR
IPB065N03LGINTR-ND
IPB065N03LGINTR
IPB065N03L G
IPB065N03LG
IFEINFIPB065N03LGATMA1
2156-IPB065N03LGATMA1
IPB065N03LGATMA1TR
IPB065N03LGINDKR-ND
IPB065N03LGINDKR
IPB065N03LGINCT
IPB065N03LGXT

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB065N03LGATMA1

Documents & Media

Datasheets
1(IP(B,P)065N03L G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IP(B,P)065N03L G)
Simulation Models
1(MOSFET OptiMOS™ 30V N-Channel Spice Model)

Quantity Price

-

Substitutes

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