Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
16mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
2350 pF @ 10 V
Power Dissipation (Max)
700mW (Ta), 18W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.1x3.1)
Package / Case
8-PowerVDFN
Base Product Number
TPCC8136