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Part Number Overview
Manufacturer Part Number
BSM180D12P2E002
Description
SIC 2N-CH 1200V 204A MODULE
Detailed Description
Mosfet Array 1200V (1.2kV) 204A (Tc) 1360W (Tc) Chassis Mount Module
Manufacturer
Rohm Semiconductor
Standard LeadTime
17 Weeks
Edacad Model
Standard Package
4
Supplier Stocks
Technical specifications
Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
204A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
18000pF @ 10V
Power - Max
1360W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM180
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Rohm Semiconductor BSM180D12P2E002
Documents & Media
Datasheets
1(BSM180D12P2E002)
Product Training Modules
()
Video File
()
Featured Product
1(SiC Schottky Barrier Diodes)
HTML Datasheet
1(BSM180D12P2E002)
Quantity Price
Quantity: 12
Unit Price: $680.53167
Packaging: Bulk
MinMultiplier: 1
Packaging: Bulk
MinMultiplier: 1
Quantity: 1
Unit Price: $705.13
Packaging: Bulk
MinMultiplier: 1
Packaging: Bulk
MinMultiplier: 1
Substitutes
-