Part Number Overview

Manufacturer Part Number
IXFH12N50F
Description
MOSFET N-CH 500V 12A TO247
Detailed Description
N-Channel 500 V 12A (Tc) 180W (Tc) Through Hole TO-247 (IXFH)
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
IXYS
Series
HiPerRF™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1870 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXFH)
Package / Case
TO-247-3
Base Product Number
IXFH12

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFH12N50F

Documents & Media

Datasheets
1(IXFH12N50F, IXFT12N50F)
PCN Obsolescence/ EOL
1(Mult Dev EOL 18/Jan/2019)
HTML Datasheet
1(IXFH12N50F, IXFT12N50F)

Quantity Price

-

Substitutes

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