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Part Number Overview
Manufacturer Part Number
AUIRF3710ZS
Description
MOSFET N-CH 100V 59A D2PAK
Detailed Description
N-Channel 100 V 59A (Tc) 160W (Tc) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
AUIRF3710
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001522564
INFIRFAUIRF3710ZS
2156-AUIRF3710ZS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRF3710ZS
Documents & Media
Datasheets
1(AUIRF3710Z(S))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRF3710Z(S))
Quantity Price
-
Substitutes
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