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Part Number Overview
Manufacturer Part Number
SIHD7N60E-GE3
Description
MOSFET N-CH 600V 7A DPAK
Detailed Description
N-Channel 600 V 7A (Tc) 78W (Tc) Surface Mount DPAK
Manufacturer
Vishay Siliconix
Standard LeadTime
21 Weeks
Edacad Model
SIHD7N60E-GE3 Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
-
Base Product Number
SIHD7
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHD7N60E-GE3
Documents & Media
Datasheets
1(SIHD7N60E)
Product Training Modules
1(High Voltage MOSFET E Series and PFC Device Selection)
PCN Assembly/Origin
1(SIL-079-2014-Rev-0 26/Sep/2014)
HTML Datasheet
1(SIHD7N60E)
EDA Models
1(SIHD7N60E-GE3 Models)
Quantity Price
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