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Part Number Overview
Manufacturer Part Number
IPD50R3K0CEBTMA1
Description
MOSFET N-CH 500V 1.7A TO252-3
Detailed Description
N-Channel 500 V 1.7A (Tc) 18W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id
3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
84 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
18W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IPD50R
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD50R3K0CEBTMA1TR
IPD50R3K0CECT-ND
IPD50R3K0CEBTMA1CT
IPD50R3K0CECT
IFEINFIPD50R3K0CEBTMA1
IPD50R3K0CETR
IPD50R3K0CEBTMA1DKR
IPD50R3K0CEDKR
IPD50R3K0CETR-ND
2156-IPD50R3K0CEBTMA1
SP000992074
IPD50R3K0CEDKR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD50R3K0CEBTMA1
Documents & Media
Datasheets
1(IPx50R3K0CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPx50R3K0CE)
Quantity Price
-
Substitutes
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