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Part Number Overview
Manufacturer Part Number
TSM60N900CP ROG
Description
MOSFET N-CH 600V 4.5A TO252
Detailed Description
N-Channel 600 V 4.5A (Tc) 50W (Tc) Surface Mount TO-252 (DPAK)
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.7 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
480 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
TSM60
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TSM60N900CP ROGCT
TSM60N900CPROGCT
TSM60N900CP ROGDKR-ND
TSM60N900CP ROGTR-ND
TSM60N900CP ROGTR
TSM60N900CPROGTR
TSM60N900CP ROGCT-ND
TSM60N900CP ROGDKR
TSM60N900CPROGDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM60N900CP ROG
Documents & Media
Datasheets
1(TSM60N900CP ROG)
Environmental Information
()
PCN Obsolescence/ EOL
1(OBS 22/Jan/2024)
HTML Datasheet
1(TSM60N900)
Quantity Price
-
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