Part Number Overview

Manufacturer Part Number
PSMN6R3-120ESQ
Description
MOSFET N-CH 120V 70A I2PAK
Detailed Description
N-Channel 120 V 70A (Tc) 405W (Tc) Through Hole I2PAK
Manufacturer
Nexperia USA Inc.
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Nexperia USA Inc.
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
207.1 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11384 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
405W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

934067856127
1727-1508
568-10988-5-ND
2156-PSMN6R3-120ESQ
568-10988-5
PSMN6R3-120ESQ-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. PSMN6R3-120ESQ

Documents & Media

Datasheets
1(PSMN6R3-120ES)
PCN Packaging
()
HTML Datasheet
1(PSMN6R3-120ES)

Quantity Price

-

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