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Part Number Overview
Manufacturer Part Number
IRL6372PBF
Description
MOSFET 2N-CH 30V 8.1A 8SO
Detailed Description
Mosfet Array 30V 8.1A 2W Surface Mount 8-SO
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
95
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8.1A
Rds On (Max) @ Id, Vgs
17.9mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1020pF @ 25V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
IRL6372
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRL6372PBF
Documents & Media
Datasheets
1(IRL6372PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Packing Material Update 16/Sep/2016)
HTML Datasheet
1(IRL6372PbF)
Quantity Price
-
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