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Part Number Overview
Manufacturer Part Number
IPU80R3K3P7AKMA1
Description
MOSFET N-CH 800V 1.9A TO251-3
Detailed Description
N-Channel 800 V 1.9A (Tc) 18W (Tc) Through Hole PG-TO251-3
Manufacturer
Infineon Technologies
Standard LeadTime
20 Weeks
Edacad Model
Standard Package
1,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™ P7
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
18W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPU80R3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFIPU80R3K3P7AKMA1
SP001636448
2156-IPU80R3K3P7AKMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPU80R3K3P7AKMA1
Documents & Media
Datasheets
1(IPU80R3K3P7)
Other Related Documents
1(Orderable Part Number OPN Translation Table)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(IPU80R3K3P7)
Simulation Models
1(CoolMOS™ Power MOSFET 800V P7 Spice Model)
Quantity Price
Quantity: 10500
Unit Price: $0.27838
Packaging: Tube
MinMultiplier: 1
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Quantity: 1
Unit Price: $0.84
Packaging: Tube
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MinMultiplier: 1
Substitutes
Part No. : FCU3400N80Z
Manufacturer. : Flip Electronics
Quantity Available. : 3,600
Unit Price. : $0.43000
Substitute Type. : Similar
Quantity Available. : 3,600
Unit Price. : $0.43000
Substitute Type. : Similar