Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
9A, 6.5A
Rds On (Max) @ Id, Vgs
24mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 20V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package
TO-252 (DPAK)
Base Product Number
FDD8424