Part Number Overview

Manufacturer Part Number
STW26NM60
Description
MOSFET N-CH 600V 30A TO247-3
Detailed Description
N-Channel 600 V 30A (Tc) 313W (Tc) Through Hole TO-247-3
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
STW26NM60 Models
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
MDmesh™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
135mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
313W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STW26N

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

497-3265-5
497-3265-5-NDR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STW26NM60

Documents & Media

Datasheets
1(STW26NM60)
HTML Datasheet
1(STW26NM60)
EDA Models
1(STW26NM60 Models)

Quantity Price

-

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