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Part Number Overview
Manufacturer Part Number
RFB18N10CS
Description
MOSFET N-CH 100V 18A TO220AB-5
Detailed Description
N-Channel 100 V 18A (Tc) 79W (Tc) Through Hole TO-220AB-5
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
121
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
FET Feature
Current Sensing
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB-5
Package / Case
TO-220-5
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
HARHARRFB18N10CS
2156-RFB18N10CS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFB18N10CS
Documents & Media
Datasheets
1(RFB18N10CS)
Quantity Price
Quantity: 121
Unit Price: $2.49
Packaging: Bulk
MinMultiplier: 121
Packaging: Bulk
MinMultiplier: 121
Substitutes
-