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Part Number Overview
Manufacturer Part Number
FQPF6N80
Description
MOSFET N-CH 800V 3.3A TO220F
Detailed Description
N-Channel 800 V 3.3A (Tc) 51W (Tc) Through Hole TO-220F-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQPF6N80 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.95Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
51W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FQPF6
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF6N80
Documents & Media
Datasheets
1(FQPF6N80)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQPF6N80)
EDA Models
1(FQPF6N80 Models)
Quantity Price
-
Substitutes
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