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Part Number Overview
Manufacturer Part Number
IRFAF40
Description
N-CHANNEL HERMETIC MOS HEXFET
Detailed Description
N-Channel 900 V 4.3A (Tc) 125W (Tc) Through Hole TO-204AA (TO-3)
Manufacturer
International Rectifier
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.9Ohm @ 4.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-204AA (TO-3)
Package / Case
TO-204AA, TO-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
IRFIRFIRFAF40
2156-IRFAF40
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRFAF40
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 50
Unit Price: $6.09
Packaging: Bulk
MinMultiplier: 50
Packaging: Bulk
MinMultiplier: 50
Substitutes
-