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Part Number Overview
Manufacturer Part Number
IPW50R399CPFKSA1
Description
MOSFET N-CH 560V 9A TO247-3
Detailed Description
N-Channel 560 V 9A (Tc) 83W (Tc) Through Hole PG-TO247-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
240
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
560 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-1
Package / Case
TO-247-3
Base Product Number
IPW50R
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFIPW50R399CPFKSA1
IPW50R399CP
SP000259980
IPW50R399CP-ND
2156-IPW50R399CPFKSA1-IT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW50R399CPFKSA1
Documents & Media
Datasheets
1(IPW50R399CP)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Power Factor Correction)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPW50R399CP)
Simulation Models
1(CoolMOS™ Power MOSFET 500V C3 Spice Model)
Quantity Price
-
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