Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Rds On (Max) @ Id, Vgs
500mOhm @ 500mA, 4V
Gate Charge (Qg) (Max) @ Vgs
1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
115 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
600mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-SCH
Package / Case
6-SMD, Flat Leads