Part Number Overview

Manufacturer Part Number
IRLML2502GTRPBF
Description
MOSFET N-CH 20V 4.2A SOT23
Detailed Description
N-Channel 20 V 4.2A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
45mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.25W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro3™/SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SP001558826
IRLML2502GTRPBFDKR
IRLML2502GTRPBFTR
IRLML2502GTRPBFCT

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLML2502GTRPBF

Documents & Media

Datasheets
1(IRLML2502GPbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRLML2502GPbF)

Quantity Price

-

Substitutes

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