China
Spain
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Italy
GermanySTW26N60M2
Part Number Overview
Manufacturer Part Number
STW26N60M2
Description
MOSFET N-CH 600V 20A TO247
Detailed Description
N-Channel 600 V 20A (Tc) 169W (Tc) Through Hole TO-247-3
Manufacturer
STMicroelectronics
Standard LeadTime
26 Weeks
Edacad Model
STW26N60M2 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
MDmesh™ M2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1360 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
169W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STW26
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STW26N60M2
Documents & Media
Datasheets
1(STx26N60M2)
PCN Packaging
1(Standard outer labelling 15/Nov/2023)
EDA Models
1(STW26N60M2 Models)
Quantity Price
Quantity: 5400
Unit Price: $1.67737
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MinMultiplier: 1
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