Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 300 V
Power Dissipation (Max)
130W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
TK14G65