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Part Number Overview
Manufacturer Part Number
TK12J60W,S1VE(S
Description
MOSFET N-CH 600V 11.5A TO3P
Detailed Description
N-Channel 600 V 11.5A (Ta) 110W (Tc) Through Hole TO-3P(N)
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
25
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tray
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3
Base Product Number
TK12J60
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK12J60W,S1VE(S
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Quantity Price
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Substitutes
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