Part Number Overview

Manufacturer Part Number
IPD80R3K3P7ATMA1
Description
MOSFET N-CH 800V 1.9A TO252-3
Detailed Description
N-Channel 800 V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
20 Weeks
Edacad Model
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™ P7
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
18W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD80R3

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IFEINFIPD80R3K3P7ATMA1
IPD80R3K3P7ATMA1DKR
2156-IPD80R3K3P7ATMA1
IPD80R3K3P7ATMA1TR
IPD80R3K3P7ATMA1CT
SP001636440

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD80R3K3P7ATMA1

Documents & Media

Datasheets
1(IPD80R3K3P7)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(IPD80R3K3P7)
Simulation Models
1(CoolMOS™ Power MOSFET 800V P7 Spice Model)

Quantity Price

Quantity: 25000
Unit Price: $0.27562
Packaging: Tape & Reel (TR)
MinMultiplier: 2500
Quantity: 12500
Unit Price: $0.27838
Packaging: Tape & Reel (TR)
MinMultiplier: 2500
Quantity: 5000
Unit Price: $0.30065
Packaging: Tape & Reel (TR)
MinMultiplier: 2500
Quantity: 2500
Unit Price: $0.31736
Packaging: Tape & Reel (TR)
MinMultiplier: 2500

Substitutes

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