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Part Number Overview
Manufacturer Part Number
IPL65R190E6AUMA1
Description
MOSFET N-CH 650V 20.2A 4VSON
Detailed Description
N-Channel 650 V 20.2A (Tc) 151W (Tc) Surface Mount PG-VSON-4
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™ E6
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1620 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-VSON-4
Package / Case
4-PowerTSFN
Base Product Number
IPL65R
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
2A (4 Weeks)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPL65R190E6AUMA1
Documents & Media
Datasheets
1(IPL65R190E6)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPL65R190E6)
Simulation Models
1(CoolMOS™ Power MOSFET 650V E6 Spice Model)
Quantity Price
-
Substitutes
Part No. : IPL65R070C7AUMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 3,684
Unit Price. : $8.15000
Substitute Type. : Direct
Quantity Available. : 3,684
Unit Price. : $8.15000
Substitute Type. : Direct