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BSM180C12P3C202
Part Number Overview
Manufacturer Part Number
BSM180C12P3C202
Description
SICFET N-CH 1200V 180A MODULE
Detailed Description
N-Channel 1200 V 180A (Tc) 880W (Tc) Chassis Mount Module
Manufacturer
Rohm Semiconductor
Standard LeadTime
17 Weeks
Edacad Model
Standard Package
12
Supplier Stocks
>>>Click to Check<<<
Technical specifications
Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 50mA
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
9000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
880W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
Module
Package / Case
Module
Base Product Number
BSM180
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor BSM180C12P3C202
Documents & Media
Datasheets
1(BSM180C12P3C202)
Product Training Modules
1(Industrial Motor Products: Part 1 - Power Devices/Gate Drivers)
Video File
1(ROHM's SiC Power and Gate Driver Solutions)
HTML Datasheet
1(BSM180C12P3C202)
Quantity Price
Quantity: 12
Unit Price: $508.84583
Packaging: Bulk
MinMultiplier: 1
Quantity: 1
Unit Price: $528.72
Packaging: Bulk
MinMultiplier: 1
Substitutes
-
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