Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
65V
Current - Continuous Drain (Id) @ 25°C
3.8A (Tc)
Rds On (Max) @ Id, Vgs
90.4mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
535pF @ 25V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
20-SOIC (0.295", 7.50mm Width)
Supplier Device Package
20-SO
Base Product Number
BUK9M