Part Number Overview

Manufacturer Part Number
FQB3N60CTM
Description
MOSFET N-CH 600V 3A D2PAK
Detailed Description
N-Channel 600 V 3A (Tc) 75W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
452
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
565 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-FQB3N60CTM
2156-FQB3N60CTM-FSTR-ND
FAIFSCFQB3N60CTM

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQB3N60CTM

Documents & Media

Datasheets
1(FQB3N60CTM)

Quantity Price

Quantity: 452
Unit Price: $0.66
Packaging: Bulk
MinMultiplier: 452

Substitutes

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