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Part Number Overview
Manufacturer Part Number
IPD036N04LGBTMA1
Description
MOSFET N-CH 40V 90A TO252-3
Detailed Description
N-Channel 40 V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6300 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Base Product Number
IPD036N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD036N04L GTR-ND
IPD036N04LGBTMA1TR
IPD036N04L GDKR
IPD036N04LG
IPD036N04LGBTMA1DKR
IPD036N04LGBTMA1CT
IPD036N04L G-ND
IPD036N04L GCT-ND
SP000387945
IPD036N04L GCT
IPD036N04L G
IPD036N04L GDKR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD036N04LGBTMA1
Documents & Media
Datasheets
1(IPD036N04L G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Cover Tape Width Update 17/Jun/2015)
Simulation Models
1(MOSFET OptiMOS™ 40V N-Channel Spice Model)
Quantity Price
-
Substitutes
Part No. : IPD036N04LGATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 42,446
Unit Price. : $1.41000
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