Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
32A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.3mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
4160 pF @ 13 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
2.1W (Ta), 54W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX