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Part Number Overview
Manufacturer Part Number
SIR626DP-T1-RE3
Description
MOSFET N-CH 60V 100A PPAK SO-8
Detailed Description
N-Channel 60 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
18 Weeks
Edacad Model
SIR626DP-T1-RE3 Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 7.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5130 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR626
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIR626DP-T1-RE3DKR
SIR626DP-T1-RE3TR
SIR626DP-T1-RE3CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIR626DP-T1-RE3
Documents & Media
Datasheets
1(SIR626DP)
Featured Product
1(SIR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFET)
PCN Design/Specification
()
HTML Datasheet
1(SIR626DP)
EDA Models
1(SIR626DP-T1-RE3 Models)
Quantity Price
Quantity: 9000
Unit Price: $0.75938
Packaging: Tape & Reel (TR)
MinMultiplier: 3000
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Packaging: Cut Tape (CT)
MinMultiplier: 1
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Packaging: Digi-Reel®
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Packaging: Digi-Reel®
MinMultiplier: 1
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Packaging: Digi-Reel®
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