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Part Number Overview
Manufacturer Part Number
SI3460DDV-T1-GE3
Description
MOSFET N-CH 20V 7.9A 6TSOP
Detailed Description
N-Channel 20 V 7.9A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
Manufacturer
Vishay Siliconix
Standard LeadTime
27 Weeks
Edacad Model
SI3460DDV-T1-GE3 Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
7.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
28mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
666 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta), 2.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
SI3460
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI3460DDV-T1-GE3DKR
SI3460DDV-T1-GE3TR
SI3460DDVT1GE3
SI3460DDV-T1-GE3CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI3460DDV-T1-GE3
Documents & Media
PCN Assembly/Origin
1(New Solder Plating Site 18/Apr/2023)
HTML Datasheet
1(SI3460DDV)
EDA Models
1(SI3460DDV-T1-GE3 Models)
Quantity Price
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