China
Spain
Rusia
Italy
GermanySI5855CDC-T1-E3
Part Number Overview
Manufacturer Part Number
SI5855CDC-T1-E3
Description
MOSFET P-CH 20V 3.7A 1206-8
Detailed Description
P-Channel 20 V 3.7A (Tc) 1.3W (Ta), 2.8W (Tc) Surface Mount 1206-8 ChipFET™
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
LITTLE FOOT®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
144mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
276 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.3W (Ta), 2.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
1206-8 ChipFET™
Package / Case
8-SMD, Flat Lead
Base Product Number
SI5855
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI5855CDC-T1-E3-ND
SI5855CDC-T1-E3TR
SI5855CDC-T1-E3CT
SI5855CDC-T1-E3DKR
SI5855CDCT1E3
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI5855CDC-T1-E3
Documents & Media
Datasheets
1(SI5855CDC)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SI5855CDC)
Quantity Price
-
Substitutes
Part No. : NTHS5441T1G
Manufacturer. : onsemi
Quantity Available. : 2,865
Unit Price. : $1.13000
Substitute Type. : Similar
Quantity Available. : 2,865
Unit Price. : $1.13000
Substitute Type. : Similar