Part Number Overview

Manufacturer Part Number
SI4886DY-T1-E3
Description
MOSFET N-CH 30V 9.5A 8SO
Detailed Description
N-Channel 30 V 9.5A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
SI4886DY-T1-E3 Models
Standard Package
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 5 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.56W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4886

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4886DY-T1-E3

Documents & Media

PCN Obsolescence/ EOL
1(SIL-0632014 16/Apr/2014)
HTML Datasheet
1(SI4886DY)
EDA Models
1(SI4886DY-T1-E3 Models)

Quantity Price

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