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GermanySIE726DF-T1-GE3
Part Number Overview
Manufacturer Part Number
SIE726DF-T1-GE3
Description
MOSFET N-CH 30V 60A 10POLARPAK
Detailed Description
N-Channel 30 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
SkyFET®, TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7400 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (L)
Package / Case
10-PolarPAK® (L)
Base Product Number
SIE726
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIE726DF-T1-GE3-ND
SIE726DFT1GE3
SIE726DF-T1-GE3TR
SIE726DF-T1-GE3CT
SIE726DF-T1-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIE726DF-T1-GE3
Documents & Media
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(SIE726DF)
Quantity Price
-
Substitutes
Part No. : SIRA02DP-T1-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 2,663
Unit Price. : $1.70000
Substitute Type. : Similar
Quantity Available. : 2,663
Unit Price. : $1.70000
Substitute Type. : Similar