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Part Number Overview
Manufacturer Part Number
SUP60N02-4M5P-E3
Description
MOSFET N-CH 20V 60A TO220AB
Detailed Description
N-Channel 20 V 60A (Tc) 3.75W (Ta), 120W (Tc) Through Hole TO-220AB
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5950 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 120W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SUP60
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUP60N02-4M5P-E3
Documents & Media
Datasheets
1(Packaging Information)
HTML Datasheet
1(SUP60N02-4M5P)
Quantity Price
-
Substitutes
Part No. : SUD50N04-8M8P-4GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 1,585
Unit Price. : $1.24000
Substitute Type. : Direct
Quantity Available. : 1,585
Unit Price. : $1.24000
Substitute Type. : Direct